In 1965, the development of gallium arsenide negative electron affinity (Negative E electron Affinity, NEA) reflective photocathode theory and the realization of the process triggered a revolution in the field of low-light night vision. The remarkable features of this type of III-V semiconductor photocathode are high sensitivity and great potential to extend to the infrared band. Introducing the transmissive GaAs photocathode and the MCP with the Al₂0₃ ion barrier film into the low-light tube constitutes the two major features of the third-generation low-light night vision device. Compared with the second-generation low-light night vision device, the sensitivity of the third-generation low-light night vision device has increased by 4 to 8 times, the lifespan has been extended by 3 times, and the utilization of the night sky light spectrum has been significantly improved. ) The target line-of-sight at night is extended by 50%~100%. Since the 1980s, the armies of the United States and Europe have successively equipped a large number of third-generation low-light night vision devices. After being used in the British Armagh War in 1983 and the Gulf War in 1991, satisfactory results were obtained that were superior to previous generations of low-light products, which in turn promoted the further expansion, reproduction and equipment of the third-generation low-light night vision devices. . The technological basis of the third-generation low-light night vision device is ultra-high vacuum, NEA surface activation, double proximity sticking, double indium sealing, surface physics, surface chemistry and long life, high gain MCP technology, etc. High-tech products such as light pipes and long-wave infrared photocathode image intensifiers have created favorable conditions.